unisonic technologies co., ltd 2n5551 npn silicon transistor www.unisonic.com.tw 1 of 4 copyright ? 2009 unisonic technologies co., ltd qw-r201-002.c high voltage switching transistor ? features * high collector-emitter voltage: v ceo =160v * high current gain ? applications * telephone switching circuit * amplifier to-92 1 1 sot-89 ? ordering information ordering number pin assignment normal lead free plating halogen free package 1 2 3 packing 2n5551-x-ab3-r 2n5551l-x-ab3-r 2N5551G-X-AB3-R sot-89 b c e tape reel 2n5551-x-t92-b 2n5551l-x-t92-b 2n5551g-x-t92-b to-92 e b c tape box 2n5551-x-t92-k 2n5551l-x-t92-k 2n5551g-x-t92-k to-92 e b c bulk
2n5551 npn silicon transistor unisonic technologies co., ltd 2 of 4 www.unisonic.com.tw qw-r201-002.c ? absolute maximum ratings (ta=25 , unless otherwise specified) parameter symbol ratings unit collector-base voltage v cbo 180 v collector-emitter voltage v ceo 160 v emitter-base voltage v ebo 6 v collector dissipation to-92 625 mw collector dissipation sot-89 p c 500 mw collector current i c 600 ma junction temperature t j +150 storage temperature t stg -55 ~ +150 note: absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? electrical characteristics (ta=25 , unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage bv cbo i c =100 a, i e =0 180 v collector-emitter breakdown voltage bv ceo i c =1ma, i b =0 160 v emitter-base breakdown voltage bv ebo i e =10 a, i c =0 6 v collector cut-off current i cbo v cb =120v, i e =0 50 na emitter cut-off current i ebo v be =4v,i c =0 50 na dc current gain(note) h fe1 h fe2 h fe3 v ce =5v, i c =1ma v ce =5v, i c =10ma v ce =5v, i c =50ma 80 80 80 160 400 collector-emitter satu ration voltage v ce(sat) i c =10ma, i b =1ma i c =50ma, i b =5ma 0.15 0.2 v base-emitter satura tion voltage v be(sat) i c =10ma, i b =1ma i c =50ma, i b =5ma 1 1 v current gain bandwidth product f t v ce =10v, i c =10ma, f=100mhz 100 300 mhz output capacitance c ob v cb =10v, i e =0 f=1mhz 6.0 pf noise figure nf i c =0.25ma, v ce =5v r s =1k , f=10hz ~ 15.7khz 8 db note: pulse test: pw<300 s, duty cycle<2% ? classification of h fe rank a b c range 80-170 150-240 200-400
2n5551 npn silicon transistor unisonic technologies co., ltd 3 of 4 www.unisonic.com.tw qw-r201-002.c ? typical characteristics dc current gain collector current, i c (ma) v ce =5v collector output capacitance collector-base voltage (v) 0 2 4 6 8 10 f=1mhz i e =0 10 0 10 1 10 2 10 -1 10 0 10 1 10 2 10 3 10 0 10 1 10 2 10 3 collector current, i c (ma) saturation voltage (v) current gain-bandwidth product collector current, i c (ma) v ce =10v 10 0 10 1 10 2 10 3 10 0 10 1 10 2 10 3
2n5551 npn silicon transistor unisonic technologies co., ltd 4 of 4 www.unisonic.com.tw qw-r201-002.c utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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